sunxi: Convert H616 DRAM options to single setting
authorJernej Skrabec <jernej.skrabec@gmail.com>
Mon, 10 Apr 2023 08:21:13 +0000 (10:21 +0200)
committerAndre Przywara <andre.przywara@arm.com>
Tue, 11 Apr 2023 23:17:21 +0000 (00:17 +0100)
Vendor DRAM settings use TPR10 parameter to enable various features.
There are many mores features that just those that are currently
mentioned. Since new will be added later and most are not known, let's
reuse value from vendor DRAM driver as-is. This will also help adding
support for new boards.

Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Reviewed-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
arch/arm/mach-sunxi/Kconfig
arch/arm/mach-sunxi/dram_sun50i_h616.c
configs/orangepi_zero2_defconfig
configs/x96_mate_defconfig

index c9e1f84..dbdc6b6 100644 (file)
@@ -137,6 +137,14 @@ check_member(sunxi_mctl_ctl_reg, unk_0x4240, 0x4240);
 #define MSTR_ACTIVE_RANKS(x)   (((x == 2) ? 3 : 1) << 24)
 #define MSTR_BURST_LENGTH(x)   (((x) >> 1) << 16)
 
+#define TPR10_CA_BIT_DELAY     BIT(16)
+#define TPR10_DX_BIT_DELAY0    BIT(17)
+#define TPR10_DX_BIT_DELAY1    BIT(18)
+#define TPR10_WRITE_LEVELING   BIT(20)
+#define TPR10_READ_CALIBRATION BIT(21)
+#define TPR10_READ_TRAINING    BIT(22)
+#define TPR10_WRITE_TRAINING   BIT(23)
+
 struct dram_para {
        u32 clk;
        enum sunxi_dram_type type;
@@ -147,6 +155,7 @@ struct dram_para {
        u32 dx_odt;
        u32 dx_dri;
        u32 ca_dri;
+       u32 tpr10;
 };
 
 
index 14fb9a9..1b47a49 100644 (file)
@@ -52,38 +52,6 @@ config DRAM_SUN50I_H616
          like H616.
 
 if DRAM_SUN50I_H616
-config DRAM_SUN50I_H616_WRITE_LEVELING
-       bool "H616 DRAM write leveling"
-       ---help---
-         Select this when DRAM on your H616 board needs write leveling.
-
-config DRAM_SUN50I_H616_READ_CALIBRATION
-       bool "H616 DRAM read calibration"
-       ---help---
-         Select this when DRAM on your H616 board needs read calibration.
-
-config DRAM_SUN50I_H616_READ_TRAINING
-       bool "H616 DRAM read training"
-       ---help---
-         Select this when DRAM on your H616 board needs read training.
-
-config DRAM_SUN50I_H616_WRITE_TRAINING
-       bool "H616 DRAM write training"
-       ---help---
-         Select this when DRAM on your H616 board needs write training.
-
-config DRAM_SUN50I_H616_BIT_DELAY_COMPENSATION
-       bool "H616 DRAM bit delay compensation"
-       ---help---
-         Select this when DRAM on your H616 board needs bit delay
-         compensation.
-
-config DRAM_SUN50I_H616_UNKNOWN_FEATURE
-       bool "H616 DRAM unknown feature"
-       ---help---
-         Select this when DRAM on your H616 board needs this unknown
-         feature.
-
 config DRAM_SUN50I_H616_DX_ODT
        hex "H616 DRAM DX ODT parameter"
        help
@@ -98,6 +66,12 @@ config DRAM_SUN50I_H616_CA_DRI
        hex "H616 DRAM CA DRI parameter"
        help
          CA DRI value from vendor DRAM settings.
+
+config DRAM_SUN50I_H616_TPR10
+       hex "H616 DRAM TPR10 parameter"
+       help
+         TPR10 value from vendor DRAM settings. It tells which features
+         should be configured, like write leveling, read calibration, etc.
 endif
 
 config SUN6I_PRCM
index 06a07df..630c7c3 100644 (file)
@@ -577,109 +577,112 @@ static bool mctl_phy_bit_delay_compensation(struct dram_para *para)
        u32 *ptr;
        int i;
 
-       clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 1);
-       setbits_le32(SUNXI_DRAM_PHY0_BASE + 8, 8);
-       clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 0x10);
+       if (para->tpr10 & TPR10_DX_BIT_DELAY1) {
+               clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 1);
+               setbits_le32(SUNXI_DRAM_PHY0_BASE + 8, 8);
+               clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 0x10);
 
-       ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x484);
-       for (i = 0; i < 9; i++) {
-               writel_relaxed(0x16, ptr);
-               writel_relaxed(0x16, ptr + 0x30);
-               ptr += 2;
-       }
-       writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4d0);
-       writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x590);
-       writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4cc);
-       writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x58c);
+               ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x484);
+               for (i = 0; i < 9; i++) {
+                       writel_relaxed(0x16, ptr);
+                       writel_relaxed(0x16, ptr + 0x30);
+                       ptr += 2;
+               }
+               writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4d0);
+               writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x590);
+               writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4cc);
+               writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x58c);
 
-       ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d8);
-       for (i = 0; i < 9; i++) {
-               writel_relaxed(0x1a, ptr);
-               writel_relaxed(0x1a, ptr + 0x30);
-               ptr += 2;
-       }
-       writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x524);
-       writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e4);
-       writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x520);
-       writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e0);
+               ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d8);
+               for (i = 0; i < 9; i++) {
+                       writel_relaxed(0x1a, ptr);
+                       writel_relaxed(0x1a, ptr + 0x30);
+                       ptr += 2;
+               }
+               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x524);
+               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e4);
+               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x520);
+               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e0);
 
-       ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x604);
-       for (i = 0; i < 9; i++) {
-               writel_relaxed(0x1a, ptr);
-               writel_relaxed(0x1a, ptr + 0x30);
-               ptr += 2;
-       }
-       writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x650);
-       writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x710);
-       writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x64c);
-       writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x70c);
+               ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x604);
+               for (i = 0; i < 9; i++) {
+                       writel_relaxed(0x1a, ptr);
+                       writel_relaxed(0x1a, ptr + 0x30);
+                       ptr += 2;
+               }
+               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x650);
+               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x710);
+               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x64c);
+               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x70c);
 
-       ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x658);
-       for (i = 0; i < 9; i++) {
-               writel_relaxed(0x1a, ptr);
-               writel_relaxed(0x1a, ptr + 0x30);
-               ptr += 2;
-       }
-       writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a4);
-       writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x764);
-       writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a0);
-       writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x760);
+               ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x658);
+               for (i = 0; i < 9; i++) {
+                       writel_relaxed(0x1a, ptr);
+                       writel_relaxed(0x1a, ptr + 0x30);
+                       ptr += 2;
+               }
+               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a4);
+               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x764);
+               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a0);
+               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x760);
 
-       dmb();
+               dmb();
 
-       setbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 1);
+               setbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 1);
+       }
 
-       /* second part */
-       clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80);
-       clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 4);
+       if (para->tpr10 & TPR10_DX_BIT_DELAY0) {
+               clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80);
+               clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 4);
 
-       ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x480);
-       for (i = 0; i < 9; i++) {
-               writel_relaxed(0x10, ptr);
-               writel_relaxed(0x10, ptr + 0x30);
-               ptr += 2;
-       }
-       writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x528);
-       writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x5e8);
-       writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x4c8);
-       writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x588);
+               ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x480);
+               for (i = 0; i < 9; i++) {
+                       writel_relaxed(0x10, ptr);
+                       writel_relaxed(0x10, ptr + 0x30);
+                       ptr += 2;
+               }
+               writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x528);
+               writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x5e8);
+               writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x4c8);
+               writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x588);
 
-       ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d4);
-       for (i = 0; i < 9; i++) {
-               writel_relaxed(0x12, ptr);
-               writel_relaxed(0x12, ptr + 0x30);
-               ptr += 2;
-       }
-       writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x52c);
-       writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5ec);
-       writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x51c);
-       writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5dc);
+               ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d4);
+               for (i = 0; i < 9; i++) {
+                       writel_relaxed(0x12, ptr);
+                       writel_relaxed(0x12, ptr + 0x30);
+                       ptr += 2;
+               }
+               writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x52c);
+               writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5ec);
+               writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x51c);
+               writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5dc);
 
-       ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x600);
-       for (i = 0; i < 9; i++) {
-               writel_relaxed(0x12, ptr);
-               writel_relaxed(0x12, ptr + 0x30);
-               ptr += 2;
-       }
-       writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x6a8);
-       writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x768);
-       writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x648);
-       writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x708);
+               ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x600);
+               for (i = 0; i < 9; i++) {
+                       writel_relaxed(0x12, ptr);
+                       writel_relaxed(0x12, ptr + 0x30);
+                       ptr += 2;
+               }
+               writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x6a8);
+               writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x768);
+               writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x648);
+               writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x708);
 
-       ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x654);
-       for (i = 0; i < 9; i++) {
-               writel_relaxed(0x14, ptr);
-               writel_relaxed(0x14, ptr + 0x30);
-               ptr += 2;
-       }
-       writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x6ac);
-       writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x76c);
-       writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x69c);
-       writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x75c);
+               ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x654);
+               for (i = 0; i < 9; i++) {
+                       writel_relaxed(0x14, ptr);
+                       writel_relaxed(0x14, ptr + 0x30);
+                       ptr += 2;
+               }
+               writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x6ac);
+               writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x76c);
+               writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x69c);
+               writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x75c);
 
-       dmb();
+               dmb();
 
-       setbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80);
+               setbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80);
+       }
 
        return true;
 }
@@ -718,7 +721,7 @@ static bool mctl_phy_init(struct dram_para *para)
        for (i = 0; i < ARRAY_SIZE(phy_init); i++)
                writel(phy_init[i], &ptr[i]);
 
-       if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_UNKNOWN_FEATURE)) {
+       if (para->tpr10 & TPR10_CA_BIT_DELAY) {
                ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x780);
                for (i = 0; i < 32; i++)
                        writel(0x16, &ptr[i]);
@@ -800,7 +803,7 @@ static bool mctl_phy_init(struct dram_para *para)
        clrbits_le32(&mctl_ctl->rfshctl3, 1);
        writel(1, &mctl_ctl->swctl);
 
-       if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_WRITE_LEVELING)) {
+       if (para->tpr10 & TPR10_WRITE_LEVELING) {
                for (i = 0; i < 5; i++)
                        if (mctl_phy_write_leveling(para))
                                break;
@@ -810,7 +813,7 @@ static bool mctl_phy_init(struct dram_para *para)
                }
        }
 
-       if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_READ_CALIBRATION)) {
+       if (para->tpr10 & TPR10_READ_CALIBRATION) {
                for (i = 0; i < 5; i++)
                        if (mctl_phy_read_calibration(para))
                                break;
@@ -820,7 +823,7 @@ static bool mctl_phy_init(struct dram_para *para)
                }
        }
 
-       if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_READ_TRAINING)) {
+       if (para->tpr10 & TPR10_READ_TRAINING) {
                for (i = 0; i < 5; i++)
                        if (mctl_phy_read_training(para))
                                break;
@@ -830,7 +833,7 @@ static bool mctl_phy_init(struct dram_para *para)
                }
        }
 
-       if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_WRITE_TRAINING)) {
+       if (para->tpr10 & TPR10_WRITE_TRAINING) {
                for (i = 0; i < 5; i++)
                        if (mctl_phy_write_training(para))
                                break;
@@ -840,8 +843,7 @@ static bool mctl_phy_init(struct dram_para *para)
                }
        }
 
-       if (IS_ENABLED(CONFIG_DRAM_SUN50I_H616_BIT_DELAY_COMPENSATION))
-               mctl_phy_bit_delay_compensation(para);
+       mctl_phy_bit_delay_compensation(para);
 
        clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x60, 4);
 
@@ -1022,6 +1024,7 @@ unsigned long sunxi_dram_init(void)
                .dx_odt = CONFIG_DRAM_SUN50I_H616_DX_ODT,
                .dx_dri = CONFIG_DRAM_SUN50I_H616_DX_DRI,
                .ca_dri = CONFIG_DRAM_SUN50I_H616_CA_DRI,
+               .tpr10 = CONFIG_DRAM_SUN50I_H616_TPR10,
        };
        unsigned long size;
 
index d70b15a..6cb942f 100644 (file)
@@ -2,13 +2,10 @@ CONFIG_ARM=y
 CONFIG_ARCH_SUNXI=y
 CONFIG_DEFAULT_DEVICE_TREE="sun50i-h616-orangepi-zero2"
 CONFIG_SPL=y
-CONFIG_DRAM_SUN50I_H616_WRITE_LEVELING=y
-CONFIG_DRAM_SUN50I_H616_READ_CALIBRATION=y
-CONFIG_DRAM_SUN50I_H616_READ_TRAINING=y
-CONFIG_DRAM_SUN50I_H616_WRITE_TRAINING=y
 CONFIG_DRAM_SUN50I_H616_DX_ODT=0x08080808
 CONFIG_DRAM_SUN50I_H616_DX_DRI=0x0e0e0e0e
 CONFIG_DRAM_SUN50I_H616_CA_DRI=0x0e0e
+CONFIG_DRAM_SUN50I_H616_TPR10=0xf83438
 CONFIG_MACH_SUN50I_H616=y
 CONFIG_R_I2C_ENABLE=y
 CONFIG_SPL_SPI_SUNXI=y
index 60cc8fb..b00daa4 100644 (file)
@@ -6,6 +6,7 @@ CONFIG_DRAM_SUN50I_H616_READ_CALIBRATION=y
 CONFIG_DRAM_SUN50I_H616_DX_ODT=0x03030303
 CONFIG_DRAM_SUN50I_H616_DX_DRI=0x0e0e0e0e
 CONFIG_DRAM_SUN50I_H616_CA_DRI=0x1c12
+CONFIG_DRAM_SUN50I_H616_TPR10=0x2f0007
 CONFIG_MACH_SUN50I_H616=y
 CONFIG_R_I2C_ENABLE=y
 # CONFIG_SYS_MALLOC_CLEAR_ON_INIT is not set