mtd: nand: split BB marker options decoding into its own function

When detecting NAND parameters, the code gets a little ugly so that the
logic is obscured. Try to remedy that by moving code to separate functions
that have well-defined purposes.

This patch splits the bad block marker options detection into its own function,
away from the other parameters (e.g., chip size, page size, etc.).

Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>

diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c
index 77b3400..16bb17f 100644 (file)
--- a/drivers/mtd/nand/nand_base.c
+++ b/drivers/mtd/nand/nand_base.c
@@ -2906,6 +2906,43 @@ static int nand_flash_detect_onfi(struct mtd_info *mtd, struct nand_chip *chip,
 }
 
 /*
+ * Set the bad block marker/indicator (BBM/BBI) patterns according to some
+ * heuristic patterns using various detected parameters (e.g., manufacturer,
+ * page size, cell-type information).
+ */
+static void nand_decode_bbm_options(struct mtd_info *mtd,
+                                   struct nand_chip *chip, u8 id_data[8])
+{
+       int maf_id = id_data[0];
+
+       /* Set the bad block position */
+       if (mtd->writesize > 512 || (chip->options & NAND_BUSWIDTH_16))
+               chip->badblockpos = NAND_LARGE_BADBLOCK_POS;
+       else
+               chip->badblockpos = NAND_SMALL_BADBLOCK_POS;
+
+       /*
+        * Bad block marker is stored in the last page of each block on Samsung
+        * and Hynix MLC devices; stored in first two pages of each block on
+        * Micron devices with 2KiB pages and on SLC Samsung, Hynix, Toshiba,
+        * AMD/Spansion, and Macronix.  All others scan only the first page.
+        */
+       if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
+                       (maf_id == NAND_MFR_SAMSUNG ||
+                        maf_id == NAND_MFR_HYNIX))
+               chip->bbt_options |= NAND_BBT_SCANLASTPAGE;
+       else if ((!(chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
+                               (maf_id == NAND_MFR_SAMSUNG ||
+                                maf_id == NAND_MFR_HYNIX ||
+                                maf_id == NAND_MFR_TOSHIBA ||
+                                maf_id == NAND_MFR_AMD ||
+                                maf_id == NAND_MFR_MACRONIX)) ||
+                       (mtd->writesize == 2048 &&
+                        maf_id == NAND_MFR_MICRON))
+               chip->bbt_options |= NAND_BBT_SCAN2NDPAGE;
+}
+
+/*
  * Get the flash and manufacturer id and lookup if the type is supported.
  */
 static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd,
@@ -3087,6 +3124,8 @@ ident_done:
                return ERR_PTR(-EINVAL);
        }
 
+       nand_decode_bbm_options(mtd, chip, id_data);
+
        /* Calculate the address shift from the page size */
        chip->page_shift = ffs(mtd->writesize) - 1;
        /* Convert chipsize to number of pages per chip -1 */
@@ -3103,33 +3142,6 @@ ident_done:
 
        chip->badblockbits = 8;
 
-       /* Set the bad block position */
-       if (mtd->writesize > 512 || (busw & NAND_BUSWIDTH_16))
-               chip->badblockpos = NAND_LARGE_BADBLOCK_POS;
-       else
-               chip->badblockpos = NAND_SMALL_BADBLOCK_POS;
-
-       /*
-        * Bad block marker is stored in the last page of each block
-        * on Samsung and Hynix MLC devices; stored in first two pages
-        * of each block on Micron devices with 2KiB pages and on
-        * SLC Samsung, Hynix, Toshiba, AMD/Spansion, and Macronix.
-        * All others scan only the first page.
-        */
-       if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
-                       (*maf_id == NAND_MFR_SAMSUNG ||
-                        *maf_id == NAND_MFR_HYNIX))
-               chip->bbt_options |= NAND_BBT_SCANLASTPAGE;
-       else if ((!(chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
-                               (*maf_id == NAND_MFR_SAMSUNG ||
-                                *maf_id == NAND_MFR_HYNIX ||
-                                *maf_id == NAND_MFR_TOSHIBA ||
-                                *maf_id == NAND_MFR_AMD ||
-                                *maf_id == NAND_MFR_MACRONIX)) ||
-                       (mtd->writesize == 2048 &&
-                        *maf_id == NAND_MFR_MICRON))
-               chip->bbt_options |= NAND_BBT_SCAN2NDPAGE;
-
        /* Check for AND chips with 4 page planes */
        if (chip->options & NAND_4PAGE_ARRAY)
                chip->erase_cmd = multi_erase_cmd;