mtd: bcm47xxnflash: increase NFLASH_READY_RETRIES

Recently imlemented writing support has shown that current num of
retries is too low. Writing requires longer waiting than simple reading.

Signed-off-by: Rafał Miłecki <zajec5@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>

diff --git a/drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c b/drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c
index 86c9a79..595de40 100644 (file)
--- a/drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c
+++ b/drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c
@@ -17,8 +17,8 @@
 #include "bcm47xxnflash.h"
 
 /* Broadcom uses 1'000'000 but it seems to be too many. Tests on WNDR4500 has
- * shown 164 retries as maxiumum. */
-#define NFLASH_READY_RETRIES           1000
+ * shown ~1000 retries as maxiumum. */
+#define NFLASH_READY_RETRIES           10000
 
 #define NFLASH_SECTOR_SIZE             512