+/* SPDX-License-Identifier: GPL-2.0 */
/*
- * linux/include/linux/mtd/nand.h
+ * Copyright 2017 - Free Electrons
*
- * Copyright © 2000-2010 David Woodhouse <dwmw2@infradead.org>
- * Steven J. Hill <sjhill@realitydiluted.com>
- * Thomas Gleixner <tglx@linutronix.de>
- *
- * SPDX-License-Identifier: GPL-2.0+
- *
- * Info:
- * Contains standard defines and IDs for NAND flash devices
- *
- * Changelog:
- * See git changelog.
+ * Authors:
+ * Boris Brezillon <boris.brezillon@free-electrons.com>
+ * Peter Pan <peterpandong@micron.com>
*/
+
#ifndef __LINUX_MTD_NAND_H
#define __LINUX_MTD_NAND_H
-#include "config.h"
+#include <linux/mtd/mtd.h>
-#include "linux/compat.h"
-#include "linux/mtd/mtd.h"
-#include "linux/mtd/flashchip.h"
-#include "linux/mtd/bbm.h"
-
-struct mtd_info;
-struct nand_flash_dev;
-struct device_node;
-
-/* Scan and identify a NAND device */
-extern int nand_scan(struct mtd_info *mtd, int max_chips);
-/*
- * Separate phases of nand_scan(), allowing board driver to intervene
- * and override command or ECC setup according to flash type.
+/**
+ * struct nand_memory_organization - Memory organization structure
+ * @bits_per_cell: number of bits per NAND cell
+ * @pagesize: page size
+ * @oobsize: OOB area size
+ * @pages_per_eraseblock: number of pages per eraseblock
+ * @eraseblocks_per_lun: number of eraseblocks per LUN (Logical Unit Number)
+ * @planes_per_lun: number of planes per LUN
+ * @luns_per_target: number of LUN per target (target is a synonym for die)
+ * @ntargets: total number of targets exposed by the NAND device
*/
-extern int nand_scan_ident(struct mtd_info *mtd, int max_chips,
- struct nand_flash_dev *table);
-extern int nand_scan_tail(struct mtd_info *mtd);
-
-/* Free resources held by the NAND device */
-extern void nand_release(struct mtd_info *mtd);
+struct nand_memory_organization {
+ unsigned int bits_per_cell;
+ unsigned int pagesize;
+ unsigned int oobsize;
+ unsigned int pages_per_eraseblock;
+ unsigned int eraseblocks_per_lun;
+ unsigned int planes_per_lun;
+ unsigned int luns_per_target;
+ unsigned int ntargets;
+};
-/* Internal helper for board drivers which need to override command function */
-extern void nand_wait_ready(struct mtd_info *mtd);
+#define NAND_MEMORG(bpc, ps, os, ppe, epl, ppl, lpt, nt) \
+ { \
+ .bits_per_cell = (bpc), \
+ .pagesize = (ps), \
+ .oobsize = (os), \
+ .pages_per_eraseblock = (ppe), \
+ .eraseblocks_per_lun = (epl), \
+ .planes_per_lun = (ppl), \
+ .luns_per_target = (lpt), \
+ .ntargets = (nt), \
+ }
-/*
- * This constant declares the max. oobsize / page, which
- * is supported now. If you add a chip with bigger oobsize/page
- * adjust this accordingly.
+/**
+ * struct nand_row_converter - Information needed to convert an absolute offset
+ * into a row address
+ * @lun_addr_shift: position of the LUN identifier in the row address
+ * @eraseblock_addr_shift: position of the eraseblock identifier in the row
+ * address
*/
-#define NAND_MAX_OOBSIZE 1216
-#define NAND_MAX_PAGESIZE 16384
+struct nand_row_converter {
+ unsigned int lun_addr_shift;
+ unsigned int eraseblock_addr_shift;
+};
-/*
- * Constants for hardware specific CLE/ALE/NCE function
+/**
+ * struct nand_pos - NAND position object
+ * @target: the NAND target/die
+ * @lun: the LUN identifier
+ * @plane: the plane within the LUN
+ * @eraseblock: the eraseblock within the LUN
+ * @page: the page within the LUN
*
- * These are bits which can be or'ed to set/clear multiple
- * bits in one go.
+ * These information are usually used by specific sub-layers to select the
+ * appropriate target/die and generate a row address to pass to the device.
*/
-/* Select the chip by setting nCE to low */
-#define NAND_NCE 0x01
-/* Select the command latch by setting CLE to high */
-#define NAND_CLE 0x02
-/* Select the address latch by setting ALE to high */
-#define NAND_ALE 0x04
-
-#define NAND_CTRL_CLE (NAND_NCE | NAND_CLE)
-#define NAND_CTRL_ALE (NAND_NCE | NAND_ALE)
-#define NAND_CTRL_CHANGE 0x80
+struct nand_pos {
+ unsigned int target;
+ unsigned int lun;
+ unsigned int plane;
+ unsigned int eraseblock;
+ unsigned int page;
+};
-/*
- * Standard NAND flash commands
- */
-#define NAND_CMD_READ0 0
-#define NAND_CMD_READ1 1
-#define NAND_CMD_RNDOUT 5
-#define NAND_CMD_PAGEPROG 0x10
-#define NAND_CMD_READOOB 0x50
-#define NAND_CMD_ERASE1 0x60
-#define NAND_CMD_STATUS 0x70
-#define NAND_CMD_SEQIN 0x80
-#define NAND_CMD_RNDIN 0x85
-#define NAND_CMD_READID 0x90
-#define NAND_CMD_ERASE2 0xd0
-#define NAND_CMD_PARAM 0xec
-#define NAND_CMD_GET_FEATURES 0xee
-#define NAND_CMD_SET_FEATURES 0xef
-#define NAND_CMD_RESET 0xff
-
-#define NAND_CMD_LOCK 0x2a
-#define NAND_CMD_UNLOCK1 0x23
-#define NAND_CMD_UNLOCK2 0x24
-
-/* Extended commands for large page devices */
-#define NAND_CMD_READSTART 0x30
-#define NAND_CMD_RNDOUTSTART 0xE0
-#define NAND_CMD_CACHEDPROG 0x15
-
-/* Extended commands for AG-AND device */
-/*
- * Note: the command for NAND_CMD_DEPLETE1 is really 0x00 but
- * there is no way to distinguish that from NAND_CMD_READ0
- * until the remaining sequence of commands has been completed
- * so add a high order bit and mask it off in the command.
+/**
+ * struct nand_page_io_req - NAND I/O request object
+ * @pos: the position this I/O request is targeting
+ * @dataoffs: the offset within the page
+ * @datalen: number of data bytes to read from/write to this page
+ * @databuf: buffer to store data in or get data from
+ * @ooboffs: the OOB offset within the page
+ * @ooblen: the number of OOB bytes to read from/write to this page
+ * @oobbuf: buffer to store OOB data in or get OOB data from
+ * @mode: one of the %MTD_OPS_XXX mode
+ *
+ * This object is used to pass per-page I/O requests to NAND sub-layers. This
+ * way all useful information are already formatted in a useful way and
+ * specific NAND layers can focus on translating these information into
+ * specific commands/operations.
*/
-#define NAND_CMD_DEPLETE1 0x100
-#define NAND_CMD_DEPLETE2 0x38
-#define NAND_CMD_STATUS_MULTI 0x71
-#define NAND_CMD_STATUS_ERROR 0x72
-/* multi-bank error status (banks 0-3) */
-#define NAND_CMD_STATUS_ERROR0 0x73
-#define NAND_CMD_STATUS_ERROR1 0x74
-#define NAND_CMD_STATUS_ERROR2 0x75
-#define NAND_CMD_STATUS_ERROR3 0x76
-#define NAND_CMD_STATUS_RESET 0x7f
-#define NAND_CMD_STATUS_CLEAR 0xff
-
-#define NAND_CMD_NONE -1
-
-/* Status bits */
-#define NAND_STATUS_FAIL 0x01
-#define NAND_STATUS_FAIL_N1 0x02
-#define NAND_STATUS_TRUE_READY 0x20
-#define NAND_STATUS_READY 0x40
-#define NAND_STATUS_WP 0x80
+struct nand_page_io_req {
+ struct nand_pos pos;
+ unsigned int dataoffs;
+ unsigned int datalen;
+ union {
+ const void *out;
+ void *in;
+ } databuf;
+ unsigned int ooboffs;
+ unsigned int ooblen;
+ union {
+ const void *out;
+ void *in;
+ } oobbuf;
+ int mode;
+};
-/*
- * Constants for ECC_MODES
+/**
+ * struct nand_ecc_req - NAND ECC requirements
+ * @strength: ECC strength
+ * @step_size: ECC step/block size
*/
-typedef enum {
- NAND_ECC_NONE,
- NAND_ECC_SOFT,
- NAND_ECC_HW,
- NAND_ECC_HW_SYNDROME,
- NAND_ECC_HW_OOB_FIRST,
- NAND_ECC_SOFT_BCH,
-} nand_ecc_modes_t;
+struct nand_ecc_req {
+ unsigned int strength;
+ unsigned int step_size;
+};
-/*
- * Constants for Hardware ECC
- */
-/* Reset Hardware ECC for read */
-#define NAND_ECC_READ 0
-/* Reset Hardware ECC for write */
-#define NAND_ECC_WRITE 1
-/* Enable Hardware ECC before syndrome is read back from flash */
-#define NAND_ECC_READSYN 2
+#define NAND_ECCREQ(str, stp) { .strength = (str), .step_size = (stp) }
-/*
- * Enable generic NAND 'page erased' check. This check is only done when
- * ecc.correct() returns -EBADMSG.
- * Set this flag if your implementation does not fix bitflips in erased
- * pages and you want to rely on the default implementation.
+/**
+ * struct nand_bbt - bad block table object
+ * @cache: in memory BBT cache
*/
-#define NAND_ECC_GENERIC_ERASED_CHECK BIT(0)
-
-/* Bit mask for flags passed to do_nand_read_ecc */
-#define NAND_GET_DEVICE 0x80
+struct nand_bbt {
+ unsigned long *cache;
+};
+struct nand_device;
-/*
- * Option constants for bizarre disfunctionality and real
- * features.
- */
-/* Buswidth is 16 bit */
-#define NAND_BUSWIDTH_16 0x00000002
-/* Device supports partial programming without padding */
-#define NAND_NO_PADDING 0x00000004
-/* Chip has cache program function */
-#define NAND_CACHEPRG 0x00000008
-/* Chip has copy back function */
-#define NAND_COPYBACK 0x00000010
-/*
- * Chip requires ready check on read (for auto-incremented sequential read).
- * True only for small page devices; large page devices do not support
- * autoincrement.
+/**
+ * struct nand_ops - NAND operations
+ * @erase: erase a specific block. No need to check if the block is bad before
+ * erasing, this has been taken care of by the generic NAND layer
+ * @markbad: mark a specific block bad. No need to check if the block is
+ * already marked bad, this has been taken care of by the generic
+ * NAND layer. This method should just write the BBM (Bad Block
+ * Marker) so that future call to struct_nand_ops->isbad() return
+ * true
+ * @isbad: check whether a block is bad or not. This method should just read
+ * the BBM and return whether the block is bad or not based on what it
+ * reads
+ *
+ * These are all low level operations that should be implemented by specialized
+ * NAND layers (SPI NAND, raw NAND, ...).
*/
-#define NAND_NEED_READRDY 0x00000100
+struct nand_ops {
+ int (*erase)(struct nand_device *nand, const struct nand_pos *pos);
+ int (*markbad)(struct nand_device *nand, const struct nand_pos *pos);
+ bool (*isbad)(struct nand_device *nand, const struct nand_pos *pos);
+};
-/* Chip does not allow subpage writes */
-#define NAND_NO_SUBPAGE_WRITE 0x00000200
+/**
+ * struct nand_device - NAND device
+ * @mtd: MTD instance attached to the NAND device
+ * @memorg: memory layout
+ * @eccreq: ECC requirements
+ * @rowconv: position to row address converter
+ * @bbt: bad block table info
+ * @ops: NAND operations attached to the NAND device
+ *
+ * Generic NAND object. Specialized NAND layers (raw NAND, SPI NAND, OneNAND)
+ * should declare their own NAND object embedding a nand_device struct (that's
+ * how inheritance is done).
+ * struct_nand_device->memorg and struct_nand_device->eccreq should be filled
+ * at device detection time to reflect the NAND device
+ * capabilities/requirements. Once this is done nanddev_init() can be called.
+ * It will take care of converting NAND information into MTD ones, which means
+ * the specialized NAND layers should never manually tweak
+ * struct_nand_device->mtd except for the ->_read/write() hooks.
+ */
+struct nand_device {
+ struct mtd_info *mtd;
+ struct nand_memory_organization memorg;
+ struct nand_ecc_req eccreq;
+ struct nand_row_converter rowconv;
+ struct nand_bbt bbt;
+ const struct nand_ops *ops;
+};
-/* Device is one of 'new' xD cards that expose fake nand command set */
-#define NAND_BROKEN_XD 0x00000400
+/**
+ * struct nand_io_iter - NAND I/O iterator
+ * @req: current I/O request
+ * @oobbytes_per_page: maximum number of OOB bytes per page
+ * @dataleft: remaining number of data bytes to read/write
+ * @oobleft: remaining number of OOB bytes to read/write
+ *
+ * Can be used by specialized NAND layers to iterate over all pages covered
+ * by an MTD I/O request, which should greatly simplifies the boiler-plate
+ * code needed to read/write data from/to a NAND device.
+ */
+struct nand_io_iter {
+ struct nand_page_io_req req;
+ unsigned int oobbytes_per_page;
+ unsigned int dataleft;
+ unsigned int oobleft;
+};
-/* Device behaves just like nand, but is readonly */
-#define NAND_ROM 0x00000800
+/**
+ * mtd_to_nanddev() - Get the NAND device attached to the MTD instance
+ * @mtd: MTD instance
+ *
+ * Return: the NAND device embedding @mtd.
+ */
+static inline struct nand_device *mtd_to_nanddev(struct mtd_info *mtd)
+{
+ return mtd->priv;
+}
-/* Device supports subpage reads */
-#define NAND_SUBPAGE_READ 0x00001000
+/**
+ * nanddev_to_mtd() - Get the MTD device attached to a NAND device
+ * @nand: NAND device
+ *
+ * Return: the MTD device embedded in @nand.
+ */
+static inline struct mtd_info *nanddev_to_mtd(struct nand_device *nand)
+{
+ return nand->mtd;
+}
/*
- * Some MLC NANDs need data scrambling to limit bitflips caused by repeated
- * patterns.
+ * nanddev_bits_per_cell() - Get the number of bits per cell
+ * @nand: NAND device
+ *
+ * Return: the number of bits per cell.
*/
-#define NAND_NEED_SCRAMBLING 0x00002000
-
-/* Options valid for Samsung large page devices */
-#define NAND_SAMSUNG_LP_OPTIONS NAND_CACHEPRG
-
-/* Macros to identify the above */
-#define NAND_HAS_CACHEPROG(chip) ((chip->options & NAND_CACHEPRG))
-#define NAND_HAS_SUBPAGE_READ(chip) ((chip->options & NAND_SUBPAGE_READ))
+static inline unsigned int nanddev_bits_per_cell(const struct nand_device *nand)
+{
+ return nand->memorg.bits_per_cell;
+}
-/* Non chip related options */
-/* This option skips the bbt scan during initialization. */
-#define NAND_SKIP_BBTSCAN 0x00010000
-/*
- * This option is defined if the board driver allocates its own buffers
- * (e.g. because it needs them DMA-coherent).
+/**
+ * nanddev_page_size() - Get NAND page size
+ * @nand: NAND device
+ *
+ * Return: the page size.
*/
-#define NAND_OWN_BUFFERS 0x00020000
-/* Chip may not exist, so silence any errors in scan */
-#define NAND_SCAN_SILENT_NODEV 0x00040000
-/*
- * Autodetect nand buswidth with readid/onfi.
- * This suppose the driver will configure the hardware in 8 bits mode
- * when calling nand_scan_ident, and update its configuration
- * before calling nand_scan_tail.
+static inline size_t nanddev_page_size(const struct nand_device *nand)
+{
+ return nand->memorg.pagesize;
+}
+
+/**
+ * nanddev_per_page_oobsize() - Get NAND OOB size
+ * @nand: NAND device
+ *
+ * Return: the OOB size.
*/
-#define NAND_BUSWIDTH_AUTO 0x00080000
-/*
- * This option could be defined by controller drivers to protect against
- * kmap'ed, vmalloc'ed highmem buffers being passed from upper layers
+static inline unsigned int
+nanddev_per_page_oobsize(const struct nand_device *nand)
+{
+ return nand->memorg.oobsize;
+}
+
+/**
+ * nanddev_pages_per_eraseblock() - Get the number of pages per eraseblock
+ * @nand: NAND device
+ *
+ * Return: the number of pages per eraseblock.
*/
-#define NAND_USE_BOUNCE_BUFFER 0x00100000
-
-/* Options set by nand scan */
-/* bbt has already been read */
-#define NAND_BBT_SCANNED 0x40000000
-/* Nand scan has allocated controller struct */
-#define NAND_CONTROLLER_ALLOC 0x80000000
-
-/* Cell info constants */
-#define NAND_CI_CHIPNR_MSK 0x03
-#define NAND_CI_CELLTYPE_MSK 0x0C
-#define NAND_CI_CELLTYPE_SHIFT 2
-
-/* Keep gcc happy */
-struct nand_chip;
-
-/* ONFI features */
-#define ONFI_FEATURE_16_BIT_BUS (1 << 0)
-#define ONFI_FEATURE_EXT_PARAM_PAGE (1 << 7)
-
-/* ONFI timing mode, used in both asynchronous and synchronous mode */
-#define ONFI_TIMING_MODE_0 (1 << 0)
-#define ONFI_TIMING_MODE_1 (1 << 1)
-#define ONFI_TIMING_MODE_2 (1 << 2)
-#define ONFI_TIMING_MODE_3 (1 << 3)
-#define ONFI_TIMING_MODE_4 (1 << 4)
-#define ONFI_TIMING_MODE_5 (1 << 5)
-#define ONFI_TIMING_MODE_UNKNOWN (1 << 6)
-
-/* ONFI feature address */
-#define ONFI_FEATURE_ADDR_TIMING_MODE 0x1
-
-/* Vendor-specific feature address (Micron) */
-#define ONFI_FEATURE_ADDR_READ_RETRY 0x89
-
-/* ONFI subfeature parameters length */
-#define ONFI_SUBFEATURE_PARAM_LEN 4
-
-/* ONFI optional commands SET/GET FEATURES supported? */
-#define ONFI_OPT_CMD_SET_GET_FEATURES (1 << 2)
-
-struct nand_onfi_params {
- /* rev info and features block */
- /* 'O' 'N' 'F' 'I' */
- u8 sig[4];
- __le16 revision;
- __le16 features;
- __le16 opt_cmd;
- u8 reserved0[2];
- __le16 ext_param_page_length; /* since ONFI 2.1 */
- u8 num_of_param_pages; /* since ONFI 2.1 */
- u8 reserved1[17];
-
- /* manufacturer information block */
- char manufacturer[12];
- char model[20];
- u8 jedec_id;
- __le16 date_code;
- u8 reserved2[13];
-
- /* memory organization block */
- __le32 byte_per_page;
- __le16 spare_bytes_per_page;
- __le32 data_bytes_per_ppage;
- __le16 spare_bytes_per_ppage;
- __le32 pages_per_block;
- __le32 blocks_per_lun;
- u8 lun_count;
- u8 addr_cycles;
- u8 bits_per_cell;
- __le16 bb_per_lun;
- __le16 block_endurance;
- u8 guaranteed_good_blocks;
- __le16 guaranteed_block_endurance;
- u8 programs_per_page;
- u8 ppage_attr;
- u8 ecc_bits;
- u8 interleaved_bits;
- u8 interleaved_ops;
- u8 reserved3[13];
-
- /* electrical parameter block */
- u8 io_pin_capacitance_max;
- __le16 async_timing_mode;
- __le16 program_cache_timing_mode;
- __le16 t_prog;
- __le16 t_bers;
- __le16 t_r;
- __le16 t_ccs;
- __le16 src_sync_timing_mode;
- u8 src_ssync_features;
- __le16 clk_pin_capacitance_typ;
- __le16 io_pin_capacitance_typ;
- __le16 input_pin_capacitance_typ;
- u8 input_pin_capacitance_max;
- u8 driver_strength_support;
- __le16 t_int_r;
- __le16 t_adl;
- u8 reserved4[8];
-
- /* vendor */
- __le16 vendor_revision;
- u8 vendor[88];
-
- __le16 crc;
-} __packed;
-
-#define ONFI_CRC_BASE 0x4F4E
-
-/* Extended ECC information Block Definition (since ONFI 2.1) */
-struct onfi_ext_ecc_info {
- u8 ecc_bits;
- u8 codeword_size;
- __le16 bb_per_lun;
- __le16 block_endurance;
- u8 reserved[2];
-} __packed;
-
-#define ONFI_SECTION_TYPE_0 0 /* Unused section. */
-#define ONFI_SECTION_TYPE_1 1 /* for additional sections. */
-#define ONFI_SECTION_TYPE_2 2 /* for ECC information. */
-struct onfi_ext_section {
- u8 type;
- u8 length;
-} __packed;
-
-#define ONFI_EXT_SECTION_MAX 8
-
-/* Extended Parameter Page Definition (since ONFI 2.1) */
-struct onfi_ext_param_page {
- __le16 crc;
- u8 sig[4]; /* 'E' 'P' 'P' 'S' */
- u8 reserved0[10];
- struct onfi_ext_section sections[ONFI_EXT_SECTION_MAX];
-
- /*
- * The actual size of the Extended Parameter Page is in
- * @ext_param_page_length of nand_onfi_params{}.
- * The following are the variable length sections.
- * So we do not add any fields below. Please see the ONFI spec.
- */
-} __packed;
-
-struct nand_onfi_vendor_micron {
- u8 two_plane_read;
- u8 read_cache;
- u8 read_unique_id;
- u8 dq_imped;
- u8 dq_imped_num_settings;
- u8 dq_imped_feat_addr;
- u8 rb_pulldown_strength;
- u8 rb_pulldown_strength_feat_addr;
- u8 rb_pulldown_strength_num_settings;
- u8 otp_mode;
- u8 otp_page_start;
- u8 otp_data_prot_addr;
- u8 otp_num_pages;
- u8 otp_feat_addr;
- u8 read_retry_options;
- u8 reserved[72];
- u8 param_revision;
-} __packed;
-
-struct jedec_ecc_info {
- u8 ecc_bits;
- u8 codeword_size;
- __le16 bb_per_lun;
- __le16 block_endurance;
- u8 reserved[2];
-} __packed;
-
-/* JEDEC features */
-#define JEDEC_FEATURE_16_BIT_BUS (1 << 0)
-
-struct nand_jedec_params {
- /* rev info and features block */
- /* 'J' 'E' 'S' 'D' */
- u8 sig[4];
- __le16 revision;
- __le16 features;
- u8 opt_cmd[3];
- __le16 sec_cmd;
- u8 num_of_param_pages;
- u8 reserved0[18];
-
- /* manufacturer information block */
- char manufacturer[12];
- char model[20];
- u8 jedec_id[6];
- u8 reserved1[10];
-
- /* memory organization block */
- __le32 byte_per_page;
- __le16 spare_bytes_per_page;
- u8 reserved2[6];
- __le32 pages_per_block;
- __le32 blocks_per_lun;
- u8 lun_count;
- u8 addr_cycles;
- u8 bits_per_cell;
- u8 programs_per_page;
- u8 multi_plane_addr;
- u8 multi_plane_op_attr;
- u8 reserved3[38];
-
- /* electrical parameter block */
- __le16 async_sdr_speed_grade;
- __le16 toggle_ddr_speed_grade;
- __le16 sync_ddr_speed_grade;
- u8 async_sdr_features;
- u8 toggle_ddr_features;
- u8 sync_ddr_features;
- __le16 t_prog;
- __le16 t_bers;
- __le16 t_r;
- __le16 t_r_multi_plane;
- __le16 t_ccs;
- __le16 io_pin_capacitance_typ;
- __le16 input_pin_capacitance_typ;
- __le16 clk_pin_capacitance_typ;
- u8 driver_strength_support;
- __le16 t_adl;
- u8 reserved4[36];
-
- /* ECC and endurance block */
- u8 guaranteed_good_blocks;
- __le16 guaranteed_block_endurance;
- struct jedec_ecc_info ecc_info[4];
- u8 reserved5[29];
-
- /* reserved */
- u8 reserved6[148];
-
- /* vendor */
- __le16 vendor_rev_num;
- u8 reserved7[88];
-
- /* CRC for Parameter Page */
- __le16 crc;
-} __packed;
+static inline unsigned int
+nanddev_pages_per_eraseblock(const struct nand_device *nand)
+{
+ return nand->memorg.pages_per_eraseblock;
+}
/**
- * struct nand_hw_control - Control structure for hardware controller (e.g ECC generator) shared among independent devices
- * @lock: protection lock
- * @active: the mtd device which holds the controller currently
- * @wq: wait queue to sleep on if a NAND operation is in
- * progress used instead of the per chip wait queue
- * when a hw controller is available.
+ * nanddev_per_page_oobsize() - Get NAND erase block size
+ * @nand: NAND device
+ *
+ * Return: the eraseblock size.
*/
-struct nand_hw_control {
- spinlock_t lock;
- struct nand_chip *active;
-};
+static inline size_t nanddev_eraseblock_size(const struct nand_device *nand)
+{
+ return nand->memorg.pagesize * nand->memorg.pages_per_eraseblock;
+}
/**
- * struct nand_ecc_ctrl - Control structure for ECC
- * @mode: ECC mode
- * @steps: number of ECC steps per page
- * @size: data bytes per ECC step
- * @bytes: ECC bytes per step
- * @strength: max number of correctible bits per ECC step
- * @total: total number of ECC bytes per page
- * @prepad: padding information for syndrome based ECC generators
- * @postpad: padding information for syndrome based ECC generators
- * @options: ECC specific options (see NAND_ECC_XXX flags defined above)
- * @layout: ECC layout control struct pointer
- * @priv: pointer to private ECC control data
- * @hwctl: function to control hardware ECC generator. Must only
- * be provided if an hardware ECC is available
- * @calculate: function for ECC calculation or readback from ECC hardware
- * @correct: function for ECC correction, matching to ECC generator (sw/hw).
- * Should return a positive number representing the number of
- * corrected bitflips, -EBADMSG if the number of bitflips exceed
- * ECC strength, or any other error code if the error is not
- * directly related to correction.
- * If -EBADMSG is returned the input buffers should be left
- * untouched.
- * @read_page_raw: function to read a raw page without ECC. This function
- * should hide the specific layout used by the ECC
- * controller and always return contiguous in-band and
- * out-of-band data even if they're not stored
- * contiguously on the NAND chip (e.g.
- * NAND_ECC_HW_SYNDROME interleaves in-band and
- * out-of-band data).
- * @write_page_raw: function to write a raw page without ECC. This function
- * should hide the specific layout used by the ECC
- * controller and consider the passed data as contiguous
- * in-band and out-of-band data. ECC controller is
- * responsible for doing the appropriate transformations
- * to adapt to its specific layout (e.g.
- * NAND_ECC_HW_SYNDROME interleaves in-band and
- * out-of-band data).
- * @read_page: function to read a page according to the ECC generator
- * requirements; returns maximum number of bitflips corrected in
- * any single ECC step, 0 if bitflips uncorrectable, -EIO hw error
- * @read_subpage: function to read parts of the page covered by ECC;
- * returns same as read_page()
- * @write_subpage: function to write parts of the page covered by ECC.
- * @write_page: function to write a page according to the ECC generator
- * requirements.
- * @write_oob_raw: function to write chip OOB data without ECC
- * @read_oob_raw: function to read chip OOB data without ECC
- * @read_oob: function to read chip OOB data
- * @write_oob: function to write chip OOB data
+ * nanddev_eraseblocks_per_lun() - Get the number of eraseblocks per LUN
+ * @nand: NAND device
+ *
+ * Return: the number of eraseblocks per LUN.
*/
-struct nand_ecc_ctrl {
- nand_ecc_modes_t mode;
- int steps;
- int size;
- int bytes;
- int total;
- int strength;
- int prepad;
- int postpad;
- unsigned int options;
- struct nand_ecclayout *layout;
- void *priv;
- void (*hwctl)(struct mtd_info *mtd, int mode);
- int (*calculate)(struct mtd_info *mtd, const uint8_t *dat,
- uint8_t *ecc_code);
- int (*correct)(struct mtd_info *mtd, uint8_t *dat, uint8_t *read_ecc,
- uint8_t *calc_ecc);
- int (*read_page_raw)(struct mtd_info *mtd, struct nand_chip *chip,
- uint8_t *buf, int oob_required, int page);
- int (*write_page_raw)(struct mtd_info *mtd, struct nand_chip *chip,
- const uint8_t *buf, int oob_required, int page);
- int (*read_page)(struct mtd_info *mtd, struct nand_chip *chip,
- uint8_t *buf, int oob_required, int page);
- int (*read_subpage)(struct mtd_info *mtd, struct nand_chip *chip,
- uint32_t offs, uint32_t len, uint8_t *buf, int page);
- int (*write_subpage)(struct mtd_info *mtd, struct nand_chip *chip,
- uint32_t offset, uint32_t data_len,
- const uint8_t *data_buf, int oob_required, int page);
- int (*write_page)(struct mtd_info *mtd, struct nand_chip *chip,
- const uint8_t *buf, int oob_required, int page);
- int (*write_oob_raw)(struct mtd_info *mtd, struct nand_chip *chip,
- int page);
- int (*read_oob_raw)(struct mtd_info *mtd, struct nand_chip *chip,
- int page);
- int (*read_oob)(struct mtd_info *mtd, struct nand_chip *chip, int page);
- int (*write_oob)(struct mtd_info *mtd, struct nand_chip *chip,
- int page);
-};
+static inline unsigned int
+nanddev_eraseblocks_per_lun(const struct nand_device *nand)
+{
+ return nand->memorg.eraseblocks_per_lun;
+}
/**
- * struct nand_buffers - buffer structure for read/write
- * @ecccalc: buffer pointer for calculated ECC, size is oobsize.
- * @ecccode: buffer pointer for ECC read from flash, size is oobsize.
- * @databuf: buffer pointer for data, size is (page size + oobsize).
+ * nanddev_target_size() - Get the total size provided by a single target/die
+ * @nand: NAND device
*
- * Do not change the order of buffers. databuf and oobrbuf must be in
- * consecutive order.
+ * Return: the total size exposed by a single target/die in bytes.
*/
-struct nand_buffers {
- uint8_t ecccalc[ALIGN(NAND_MAX_OOBSIZE, ARCH_DMA_MINALIGN)];
- uint8_t ecccode[ALIGN(NAND_MAX_OOBSIZE, ARCH_DMA_MINALIGN)];
- uint8_t databuf[ALIGN(NAND_MAX_PAGESIZE + NAND_MAX_OOBSIZE,
- ARCH_DMA_MINALIGN)];
-};
+static inline u64 nanddev_target_size(const struct nand_device *nand)
+{
+ return (u64)nand->memorg.luns_per_target *
+ nand->memorg.eraseblocks_per_lun *
+ nand->memorg.pages_per_eraseblock *
+ nand->memorg.pagesize;
+}
/**
- * struct nand_chip - NAND Private Flash Chip Data
- * @mtd: MTD device registered to the MTD framework
- * @IO_ADDR_R: [BOARDSPECIFIC] address to read the 8 I/O lines of the
- * flash device
- * @IO_ADDR_W: [BOARDSPECIFIC] address to write the 8 I/O lines of the
- * flash device.
- * @read_byte: [REPLACEABLE] read one byte from the chip
- * @read_word: [REPLACEABLE] read one word from the chip
- * @write_byte: [REPLACEABLE] write a single byte to the chip on the
- * low 8 I/O lines
- * @write_buf: [REPLACEABLE] write data from the buffer to the chip
- * @read_buf: [REPLACEABLE] read data from the chip into the buffer
- * @select_chip: [REPLACEABLE] select chip nr
- * @block_bad: [REPLACEABLE] check if a block is bad, using OOB markers
- * @block_markbad: [REPLACEABLE] mark a block bad
- * @cmd_ctrl: [BOARDSPECIFIC] hardwarespecific function for controlling
- * ALE/CLE/nCE. Also used to write command and address
- * @dev_ready: [BOARDSPECIFIC] hardwarespecific function for accessing
- * device ready/busy line. If set to NULL no access to
- * ready/busy is available and the ready/busy information
- * is read from the chip status register.
- * @cmdfunc: [REPLACEABLE] hardwarespecific function for writing
- * commands to the chip.
- * @waitfunc: [REPLACEABLE] hardwarespecific function for wait on
- * ready.
- * @setup_read_retry: [FLASHSPECIFIC] flash (vendor) specific function for
- * setting the read-retry mode. Mostly needed for MLC NAND.
- * @ecc: [BOARDSPECIFIC] ECC control structure
- * @buffers: buffer structure for read/write
- * @hwcontrol: platform-specific hardware control structure
- * @erase: [REPLACEABLE] erase function
- * @scan_bbt: [REPLACEABLE] function to scan bad block table
- * @chip_delay: [BOARDSPECIFIC] chip dependent delay for transferring
- * data from array to read regs (tR).
- * @state: [INTERN] the current state of the NAND device
- * @oob_poi: "poison value buffer," used for laying out OOB data
- * before writing
- * @page_shift: [INTERN] number of address bits in a page (column
- * address bits).
- * @phys_erase_shift: [INTERN] number of address bits in a physical eraseblock
- * @bbt_erase_shift: [INTERN] number of address bits in a bbt entry
- * @chip_shift: [INTERN] number of address bits in one chip
- * @options: [BOARDSPECIFIC] various chip options. They can partly
- * be set to inform nand_scan about special functionality.
- * See the defines for further explanation.
- * @bbt_options: [INTERN] bad block specific options. All options used
- * here must come from bbm.h. By default, these options
- * will be copied to the appropriate nand_bbt_descr's.
- * @badblockpos: [INTERN] position of the bad block marker in the oob
- * area.
- * @badblockbits: [INTERN] minimum number of set bits in a good block's
- * bad block marker position; i.e., BBM == 11110111b is
- * not bad when badblockbits == 7
- * @bits_per_cell: [INTERN] number of bits per cell. i.e., 1 means SLC.
- * @ecc_strength_ds: [INTERN] ECC correctability from the datasheet.
- * Minimum amount of bit errors per @ecc_step_ds guaranteed
- * to be correctable. If unknown, set to zero.
- * @ecc_step_ds: [INTERN] ECC step required by the @ecc_strength_ds,
- * also from the datasheet. It is the recommended ECC step
- * size, if known; if unknown, set to zero.
- * @onfi_timing_mode_default: [INTERN] default ONFI timing mode. This field is
- * either deduced from the datasheet if the NAND
- * chip is not ONFI compliant or set to 0 if it is
- * (an ONFI chip is always configured in mode 0
- * after a NAND reset)
- * @numchips: [INTERN] number of physical chips
- * @chipsize: [INTERN] the size of one chip for multichip arrays
- * @pagemask: [INTERN] page number mask = number of (pages / chip) - 1
- * @pagebuf: [INTERN] holds the pagenumber which is currently in
- * data_buf.
- * @pagebuf_bitflips: [INTERN] holds the bitflip count for the page which is
- * currently in data_buf.
- * @subpagesize: [INTERN] holds the subpagesize
- * @onfi_version: [INTERN] holds the chip ONFI version (BCD encoded),
- * non 0 if ONFI supported.
- * @jedec_version: [INTERN] holds the chip JEDEC version (BCD encoded),
- * non 0 if JEDEC supported.
- * @onfi_params: [INTERN] holds the ONFI page parameter when ONFI is
- * supported, 0 otherwise.
- * @jedec_params: [INTERN] holds the JEDEC parameter page when JEDEC is
- * supported, 0 otherwise.
- * @read_retries: [INTERN] the number of read retry modes supported
- * @onfi_set_features: [REPLACEABLE] set the features for ONFI nand
- * @onfi_get_features: [REPLACEABLE] get the features for ONFI nand
- * @bbt: [INTERN] bad block table pointer
- * @bbt_td: [REPLACEABLE] bad block table descriptor for flash
- * lookup.
- * @bbt_md: [REPLACEABLE] bad block table mirror descriptor
- * @badblock_pattern: [REPLACEABLE] bad block scan pattern used for initial
- * bad block scan.
- * @controller: [REPLACEABLE] a pointer to a hardware controller
- * structure which is shared among multiple independent
- * devices.
- * @priv: [OPTIONAL] pointer to private chip data
- * @errstat: [OPTIONAL] hardware specific function to perform
- * additional error status checks (determine if errors are
- * correctable).
- * @write_page: [REPLACEABLE] High-level page write function
+ * nanddev_ntarget() - Get the total of targets
+ * @nand: NAND device
+ *
+ * Return: the number of targets/dies exposed by @nand.
*/
+static inline unsigned int nanddev_ntargets(const struct nand_device *nand)
+{
+ return nand->memorg.ntargets;
+}
-struct nand_chip {
- struct mtd_info mtd;
- void __iomem *IO_ADDR_R;
- void __iomem *IO_ADDR_W;
-
- uint8_t (*read_byte)(struct mtd_info *mtd);
- u16 (*read_word)(struct mtd_info *mtd);
- void (*write_byte)(struct mtd_info *mtd, uint8_t byte);
- void (*write_buf)(struct mtd_info *mtd, const uint8_t *buf, int len);
- void (*read_buf)(struct mtd_info *mtd, uint8_t *buf, int len);
- void (*select_chip)(struct mtd_info *mtd, int chip);
- int (*block_bad)(struct mtd_info *mtd, loff_t ofs);
- int (*block_markbad)(struct mtd_info *mtd, loff_t ofs);
- void (*cmd_ctrl)(struct mtd_info *mtd, int dat, unsigned int ctrl);
- int (*dev_ready)(struct mtd_info *mtd);
- void (*cmdfunc)(struct mtd_info *mtd, unsigned command, int column,
- int page_addr);
- int(*waitfunc)(struct mtd_info *mtd, struct nand_chip *this);
- int (*erase)(struct mtd_info *mtd, int page);
- int (*scan_bbt)(struct mtd_info *mtd);
- int (*errstat)(struct mtd_info *mtd, struct nand_chip *this, int state,
- int status, int page);
- int (*write_page)(struct mtd_info *mtd, struct nand_chip *chip,
- uint32_t offset, int data_len, const uint8_t *buf,
- int oob_required, int page, int cached, int raw);
- int (*onfi_set_features)(struct mtd_info *mtd, struct nand_chip *chip,
- int feature_addr, uint8_t *subfeature_para);
- int (*onfi_get_features)(struct mtd_info *mtd, struct nand_chip *chip,
- int feature_addr, uint8_t *subfeature_para);
- int (*setup_read_retry)(struct mtd_info *mtd, int retry_mode);
-
- int chip_delay;
- unsigned int options;
- unsigned int bbt_options;
-
- int page_shift;
- int phys_erase_shift;
- int bbt_erase_shift;
- int chip_shift;
- int numchips;
- uint64_t chipsize;
- int pagemask;
- int pagebuf;
- unsigned int pagebuf_bitflips;
- int subpagesize;
- uint8_t bits_per_cell;
- uint16_t ecc_strength_ds;
- uint16_t ecc_step_ds;
- int onfi_timing_mode_default;
- int badblockpos;
- int badblockbits;
-
- int onfi_version;
- int jedec_version;
-#ifdef CONFIG_SYS_NAND_ONFI_DETECTION
- struct nand_onfi_params onfi_params;
-#endif
- struct nand_jedec_params jedec_params;
-
- int read_retries;
-
- flstate_t state;
-
- uint8_t *oob_poi;
- struct nand_hw_control *controller;
- struct nand_ecclayout *ecclayout;
-
- struct nand_ecc_ctrl ecc;
- struct nand_buffers *buffers;
- struct nand_hw_control hwcontrol;
-
- uint8_t *bbt;
- struct nand_bbt_descr *bbt_td;
- struct nand_bbt_descr *bbt_md;
-
- struct nand_bbt_descr *badblock_pattern;
-
- void *priv;
-};
+/**
+ * nanddev_neraseblocks() - Get the total number of erasablocks
+ * @nand: NAND device
+ *
+ * Return: the total number of eraseblocks exposed by @nand.
+ */
+static inline unsigned int nanddev_neraseblocks(const struct nand_device *nand)
+{
+ return (u64)nand->memorg.luns_per_target *
+ nand->memorg.eraseblocks_per_lun *
+ nand->memorg.pages_per_eraseblock;
+}
-static inline struct nand_chip *mtd_to_nand(struct mtd_info *mtd)
+/**
+ * nanddev_size() - Get NAND size
+ * @nand: NAND device
+ *
+ * Return: the total size (in bytes) exposed by @nand.
+ */
+static inline u64 nanddev_size(const struct nand_device *nand)
{
- return container_of(mtd, struct nand_chip, mtd);
+ return nanddev_target_size(nand) * nanddev_ntargets(nand);
}
-static inline struct mtd_info *nand_to_mtd(struct nand_chip *chip)
+/**
+ * nanddev_get_memorg() - Extract memory organization info from a NAND device
+ * @nand: NAND device
+ *
+ * This can be used by the upper layer to fill the memorg info before calling
+ * nanddev_init().
+ *
+ * Return: the memorg object embedded in the NAND device.
+ */
+static inline struct nand_memory_organization *
+nanddev_get_memorg(struct nand_device *nand)
{
- return &chip->mtd;
+ return &nand->memorg;
}
-static inline void *nand_get_controller_data(struct nand_chip *chip)
+int nanddev_init(struct nand_device *nand, const struct nand_ops *ops,
+ struct module *owner);
+void nanddev_cleanup(struct nand_device *nand);
+
+/**
+ * nanddev_register() - Register a NAND device
+ * @nand: NAND device
+ *
+ * Register a NAND device.
+ * This function is just a wrapper around mtd_device_register()
+ * registering the MTD device embedded in @nand.
+ *
+ * Return: 0 in case of success, a negative error code otherwise.
+ */
+static inline int nanddev_register(struct nand_device *nand)
{
- return chip->priv;
+ return mtd_device_register(nand->mtd, NULL, 0);
}
-static inline void nand_set_controller_data(struct nand_chip *chip, void *priv)
+/**
+ * nanddev_unregister() - Unregister a NAND device
+ * @nand: NAND device
+ *
+ * Unregister a NAND device.
+ * This function is just a wrapper around mtd_device_unregister()
+ * unregistering the MTD device embedded in @nand.
+ *
+ * Return: 0 in case of success, a negative error code otherwise.
+ */
+static inline int nanddev_unregister(struct nand_device *nand)
{
- chip->priv = priv;
+ return mtd_device_unregister(nand->mtd);
}
-/*
- * NAND Flash Manufacturer ID Codes
+#ifndef __UBOOT__
+/**
+ * nanddev_set_of_node() - Attach a DT node to a NAND device
+ * @nand: NAND device
+ * @np: DT node
+ *
+ * Attach a DT node to a NAND device.
*/
-#define NAND_MFR_TOSHIBA 0x98
-#define NAND_MFR_SAMSUNG 0xec
-#define NAND_MFR_FUJITSU 0x04
-#define NAND_MFR_NATIONAL 0x8f
-#define NAND_MFR_RENESAS 0x07
-#define NAND_MFR_STMICRO 0x20
-#define NAND_MFR_HYNIX 0xad
-#define NAND_MFR_MICRON 0x2c
-#define NAND_MFR_AMD 0x01
-#define NAND_MFR_MACRONIX 0xc2
-#define NAND_MFR_EON 0x92
-#define NAND_MFR_SANDISK 0x45
-#define NAND_MFR_INTEL 0x89
-#define NAND_MFR_ATO 0x9b
-
-/* The maximum expected count of bytes in the NAND ID sequence */
-#define NAND_MAX_ID_LEN 8
+static inline void nanddev_set_of_node(struct nand_device *nand,
+ const struct device_node *np)
+{
+ mtd_set_of_node(nand->mtd, np);
+}
-/*
- * A helper for defining older NAND chips where the second ID byte fully
- * defined the chip, including the geometry (chip size, eraseblock size, page
- * size). All these chips have 512 bytes NAND page size.
+/**
+ * nanddev_get_of_node() - Retrieve the DT node attached to a NAND device
+ * @nand: NAND device
+ *
+ * Return: the DT node attached to @nand.
*/
-#define LEGACY_ID_NAND(nm, devid, chipsz, erasesz, opts) \
- { .name = (nm), {{ .dev_id = (devid) }}, .pagesize = 512, \
- .chipsize = (chipsz), .erasesize = (erasesz), .options = (opts) }
+static inline const struct device_node *nanddev_get_of_node(struct nand_device *nand)
+{
+ return mtd_get_of_node(nand->mtd);
+}
+#else
+/**
+ * nanddev_set_of_node() - Attach a DT node to a NAND device
+ * @nand: NAND device
+ * @node: ofnode
+ *
+ * Attach a DT node to a NAND device.
+ */
+static inline void nanddev_set_ofnode(struct nand_device *nand, ofnode node)
+{
+ mtd_set_ofnode(nand->mtd, node);
+}
+#endif /* __UBOOT__ */
-/*
- * A helper for defining newer chips which report their page size and
- * eraseblock size via the extended ID bytes.
+/**
+ * nanddev_offs_to_pos() - Convert an absolute NAND offset into a NAND position
+ * @nand: NAND device
+ * @offs: absolute NAND offset (usually passed by the MTD layer)
+ * @pos: a NAND position object to fill in
+ *
+ * Converts @offs into a nand_pos representation.
*
- * The real difference between LEGACY_ID_NAND and EXTENDED_ID_NAND is that with
- * EXTENDED_ID_NAND, manufacturers overloaded the same device ID so that the
- * device ID now only represented a particular total chip size (and voltage,
- * buswidth), and the page size, eraseblock size, and OOB size could vary while
- * using the same device ID.
+ * Return: the offset within the NAND page pointed by @pos.
*/
-#define EXTENDED_ID_NAND(nm, devid, chipsz, opts) \
- { .name = (nm), {{ .dev_id = (devid) }}, .chipsize = (chipsz), \
- .options = (opts) }
+static inline unsigned int nanddev_offs_to_pos(struct nand_device *nand,
+ loff_t offs,
+ struct nand_pos *pos)
+{
+ unsigned int pageoffs;
+ u64 tmp = offs;
+
+ pageoffs = do_div(tmp, nand->memorg.pagesize);
+ pos->page = do_div(tmp, nand->memorg.pages_per_eraseblock);
+ pos->eraseblock = do_div(tmp, nand->memorg.eraseblocks_per_lun);
+ pos->plane = pos->eraseblock % nand->memorg.planes_per_lun;
+ pos->lun = do_div(tmp, nand->memorg.luns_per_target);
+ pos->target = tmp;
-#define NAND_ECC_INFO(_strength, _step) \
- { .strength_ds = (_strength), .step_ds = (_step) }
-#define NAND_ECC_STRENGTH(type) ((type)->ecc.strength_ds)
-#define NAND_ECC_STEP(type) ((type)->ecc.step_ds)
+ return pageoffs;
+}
/**
- * struct nand_flash_dev - NAND Flash Device ID Structure
- * @name: a human-readable name of the NAND chip
- * @dev_id: the device ID (the second byte of the full chip ID array)
- * @mfr_id: manufecturer ID part of the full chip ID array (refers the same
- * memory address as @id[0])
- * @dev_id: device ID part of the full chip ID array (refers the same memory
- * address as @id[1])
- * @id: full device ID array
- * @pagesize: size of the NAND page in bytes; if 0, then the real page size (as
- * well as the eraseblock size) is determined from the extended NAND
- * chip ID array)
- * @chipsize: total chip size in MiB
- * @erasesize: eraseblock size in bytes (determined from the extended ID if 0)
- * @options: stores various chip bit options
- * @id_len: The valid length of the @id.
- * @oobsize: OOB size
- * @ecc: ECC correctability and step information from the datasheet.
- * @ecc.strength_ds: The ECC correctability from the datasheet, same as the
- * @ecc_strength_ds in nand_chip{}.
- * @ecc.step_ds: The ECC step required by the @ecc.strength_ds, same as the
- * @ecc_step_ds in nand_chip{}, also from the datasheet.
- * For example, the "4bit ECC for each 512Byte" can be set with
- * NAND_ECC_INFO(4, 512).
- * @onfi_timing_mode_default: the default ONFI timing mode entered after a NAND
- * reset. Should be deduced from timings described
- * in the datasheet.
+ * nanddev_pos_cmp() - Compare two NAND positions
+ * @a: First NAND position
+ * @b: Second NAND position
*
+ * Compares two NAND positions.
+ *
+ * Return: -1 if @a < @b, 0 if @a == @b and 1 if @a > @b.
*/
-struct nand_flash_dev {
- char *name;
- union {
- struct {
- uint8_t mfr_id;
- uint8_t dev_id;
- };
- uint8_t id[NAND_MAX_ID_LEN];
- };
- unsigned int pagesize;
- unsigned int chipsize;
- unsigned int erasesize;
- unsigned int options;
- uint16_t id_len;
- uint16_t oobsize;
- struct {
- uint16_t strength_ds;
- uint16_t step_ds;
- } ecc;
- int onfi_timing_mode_default;
-};
+static inline int nanddev_pos_cmp(const struct nand_pos *a,
+ const struct nand_pos *b)
+{
+ if (a->target != b->target)
+ return a->target < b->target ? -1 : 1;
-/**
- * struct nand_manufacturers - NAND Flash Manufacturer ID Structure
- * @name: Manufacturer name
- * @id: manufacturer ID code of device.
-*/
-struct nand_manufacturers {
- int id;
- char *name;
-};
+ if (a->lun != b->lun)
+ return a->lun < b->lun ? -1 : 1;
-extern struct nand_flash_dev nand_flash_ids[];
-extern struct nand_manufacturers nand_manuf_ids[];
+ if (a->eraseblock != b->eraseblock)
+ return a->eraseblock < b->eraseblock ? -1 : 1;
-extern int nand_default_bbt(struct mtd_info *mtd);
-extern int nand_markbad_bbt(struct mtd_info *mtd, loff_t offs);
-extern int nand_isreserved_bbt(struct mtd_info *mtd, loff_t offs);
-extern int nand_isbad_bbt(struct mtd_info *mtd, loff_t offs, int allowbbt);
-extern int nand_erase_nand(struct mtd_info *mtd, struct erase_info *instr,
- int allowbbt);
-extern int nand_do_read(struct mtd_info *mtd, loff_t from, size_t len,
- size_t *retlen, uint8_t *buf);
+ if (a->page != b->page)
+ return a->page < b->page ? -1 : 1;
-/*
-* Constants for oob configuration
-*/
-#define NAND_SMALL_BADBLOCK_POS 5
-#define NAND_LARGE_BADBLOCK_POS 0
+ return 0;
+}
/**
- * struct platform_nand_chip - chip level device structure
- * @nr_chips: max. number of chips to scan for
- * @chip_offset: chip number offset
- * @nr_partitions: number of partitions pointed to by partitions (or zero)
- * @partitions: mtd partition list
- * @chip_delay: R/B delay value in us
- * @options: Option flags, e.g. 16bit buswidth
- * @bbt_options: BBT option flags, e.g. NAND_BBT_USE_FLASH
- * @part_probe_types: NULL-terminated array of probe types
+ * nanddev_pos_to_offs() - Convert a NAND position into an absolute offset
+ * @nand: NAND device
+ * @pos: the NAND position to convert
+ *
+ * Converts @pos NAND position into an absolute offset.
+ *
+ * Return: the absolute offset. Note that @pos points to the beginning of a
+ * page, if one wants to point to a specific offset within this page
+ * the returned offset has to be adjusted manually.
*/
-struct platform_nand_chip {
- int nr_chips;
- int chip_offset;
- int nr_partitions;
- struct mtd_partition *partitions;
- int chip_delay;
- unsigned int options;
- unsigned int bbt_options;
- const char **part_probe_types;
-};
+static inline loff_t nanddev_pos_to_offs(struct nand_device *nand,
+ const struct nand_pos *pos)
+{
+ unsigned int npages;
-/* Keep gcc happy */
-struct platform_device;
+ npages = pos->page +
+ ((pos->eraseblock +
+ (pos->lun +
+ (pos->target * nand->memorg.luns_per_target)) *
+ nand->memorg.eraseblocks_per_lun) *
+ nand->memorg.pages_per_eraseblock);
+
+ return (loff_t)npages * nand->memorg.pagesize;
+}
/**
- * struct platform_nand_ctrl - controller level device structure
- * @probe: platform specific function to probe/setup hardware
- * @remove: platform specific function to remove/teardown hardware
- * @hwcontrol: platform specific hardware control structure
- * @dev_ready: platform specific function to read ready/busy pin
- * @select_chip: platform specific chip select function
- * @cmd_ctrl: platform specific function for controlling
- * ALE/CLE/nCE. Also used to write command and address
- * @write_buf: platform specific function for write buffer
- * @read_buf: platform specific function for read buffer
- * @read_byte: platform specific function to read one byte from chip
- * @priv: private data to transport driver specific settings
+ * nanddev_pos_to_row() - Extract a row address from a NAND position
+ * @nand: NAND device
+ * @pos: the position to convert
*
- * All fields are optional and depend on the hardware driver requirements
+ * Converts a NAND position into a row address that can then be passed to the
+ * device.
+ *
+ * Return: the row address extracted from @pos.
*/
-struct platform_nand_ctrl {
- int (*probe)(struct platform_device *pdev);
- void (*remove)(struct platform_device *pdev);
- void (*hwcontrol)(struct mtd_info *mtd, int cmd);
- int (*dev_ready)(struct mtd_info *mtd);
- void (*select_chip)(struct mtd_info *mtd, int chip);
- void (*cmd_ctrl)(struct mtd_info *mtd, int dat, unsigned int ctrl);
- void (*write_buf)(struct mtd_info *mtd, const uint8_t *buf, int len);
- void (*read_buf)(struct mtd_info *mtd, uint8_t *buf, int len);
- unsigned char (*read_byte)(struct mtd_info *mtd);
- void *priv;
-};
+static inline unsigned int nanddev_pos_to_row(struct nand_device *nand,
+ const struct nand_pos *pos)
+{
+ return (pos->lun << nand->rowconv.lun_addr_shift) |
+ (pos->eraseblock << nand->rowconv.eraseblock_addr_shift) |
+ pos->page;
+}
/**
- * struct platform_nand_data - container structure for platform-specific data
- * @chip: chip level chip structure
- * @ctrl: controller level device structure
+ * nanddev_pos_next_target() - Move a position to the next target/die
+ * @nand: NAND device
+ * @pos: the position to update
+ *
+ * Updates @pos to point to the start of the next target/die. Useful when you
+ * want to iterate over all targets/dies of a NAND device.
*/
-struct platform_nand_data {
- struct platform_nand_chip chip;
- struct platform_nand_ctrl ctrl;
-};
+static inline void nanddev_pos_next_target(struct nand_device *nand,
+ struct nand_pos *pos)
+{
+ pos->page = 0;
+ pos->plane = 0;
+ pos->eraseblock = 0;
+ pos->lun = 0;
+ pos->target++;
+}
-#ifdef CONFIG_SYS_NAND_ONFI_DETECTION
-/* return the supported features. */
-static inline int onfi_feature(struct nand_chip *chip)
+/**
+ * nanddev_pos_next_lun() - Move a position to the next LUN
+ * @nand: NAND device
+ * @pos: the position to update
+ *
+ * Updates @pos to point to the start of the next LUN. Useful when you want to
+ * iterate over all LUNs of a NAND device.
+ */
+static inline void nanddev_pos_next_lun(struct nand_device *nand,
+ struct nand_pos *pos)
{
- return chip->onfi_version ? le16_to_cpu(chip->onfi_params.features) : 0;
+ if (pos->lun >= nand->memorg.luns_per_target - 1)
+ return nanddev_pos_next_target(nand, pos);
+
+ pos->lun++;
+ pos->page = 0;
+ pos->plane = 0;
+ pos->eraseblock = 0;
}
-/* return the supported asynchronous timing mode. */
-static inline int onfi_get_async_timing_mode(struct nand_chip *chip)
+/**
+ * nanddev_pos_next_eraseblock() - Move a position to the next eraseblock
+ * @nand: NAND device
+ * @pos: the position to update
+ *
+ * Updates @pos to point to the start of the next eraseblock. Useful when you
+ * want to iterate over all eraseblocks of a NAND device.
+ */
+static inline void nanddev_pos_next_eraseblock(struct nand_device *nand,
+ struct nand_pos *pos)
{
- if (!chip->onfi_version)
- return ONFI_TIMING_MODE_UNKNOWN;
- return le16_to_cpu(chip->onfi_params.async_timing_mode);
+ if (pos->eraseblock >= nand->memorg.eraseblocks_per_lun - 1)
+ return nanddev_pos_next_lun(nand, pos);
+
+ pos->eraseblock++;
+ pos->page = 0;
+ pos->plane = pos->eraseblock % nand->memorg.planes_per_lun;
}
-/* return the supported synchronous timing mode. */
-static inline int onfi_get_sync_timing_mode(struct nand_chip *chip)
+/**
+ * nanddev_pos_next_eraseblock() - Move a position to the next page
+ * @nand: NAND device
+ * @pos: the position to update
+ *
+ * Updates @pos to point to the start of the next page. Useful when you want to
+ * iterate over all pages of a NAND device.
+ */
+static inline void nanddev_pos_next_page(struct nand_device *nand,
+ struct nand_pos *pos)
{
- if (!chip->onfi_version)
- return ONFI_TIMING_MODE_UNKNOWN;
- return le16_to_cpu(chip->onfi_params.src_sync_timing_mode);
+ if (pos->page >= nand->memorg.pages_per_eraseblock - 1)
+ return nanddev_pos_next_eraseblock(nand, pos);
+
+ pos->page++;
}
-#endif
-/*
- * Check if it is a SLC nand.
- * The !nand_is_slc() can be used to check the MLC/TLC nand chips.
- * We do not distinguish the MLC and TLC now.
+/**
+ * nand_io_iter_init - Initialize a NAND I/O iterator
+ * @nand: NAND device
+ * @offs: absolute offset
+ * @req: MTD request
+ * @iter: NAND I/O iterator
+ *
+ * Initializes a NAND iterator based on the information passed by the MTD
+ * layer.
*/
-static inline bool nand_is_slc(struct nand_chip *chip)
+static inline void nanddev_io_iter_init(struct nand_device *nand,
+ loff_t offs, struct mtd_oob_ops *req,
+ struct nand_io_iter *iter)
{
- return chip->bits_per_cell == 1;
+ struct mtd_info *mtd = nanddev_to_mtd(nand);
+
+ iter->req.mode = req->mode;
+ iter->req.dataoffs = nanddev_offs_to_pos(nand, offs, &iter->req.pos);
+ iter->req.ooboffs = req->ooboffs;
+ iter->oobbytes_per_page = mtd_oobavail(mtd, req);
+ iter->dataleft = req->len;
+ iter->oobleft = req->ooblen;
+ iter->req.databuf.in = req->datbuf;
+ iter->req.datalen = min_t(unsigned int,
+ nand->memorg.pagesize - iter->req.dataoffs,
+ iter->dataleft);
+ iter->req.oobbuf.in = req->oobbuf;
+ iter->req.ooblen = min_t(unsigned int,
+ iter->oobbytes_per_page - iter->req.ooboffs,
+ iter->oobleft);
}
/**
- * Check if the opcode's address should be sent only on the lower 8 bits
- * @command: opcode to check
+ * nand_io_iter_next_page - Move to the next page
+ * @nand: NAND device
+ * @iter: NAND I/O iterator
+ *
+ * Updates the @iter to point to the next page.
*/
-static inline int nand_opcode_8bits(unsigned int command)
+static inline void nanddev_io_iter_next_page(struct nand_device *nand,
+ struct nand_io_iter *iter)
{
- switch (command) {
- case NAND_CMD_READID:
- case NAND_CMD_PARAM:
- case NAND_CMD_GET_FEATURES:
- case NAND_CMD_SET_FEATURES:
- return 1;
- default:
- break;
- }
- return 0;
+ nanddev_pos_next_page(nand, &iter->req.pos);
+ iter->dataleft -= iter->req.datalen;
+ iter->req.databuf.in += iter->req.datalen;
+ iter->oobleft -= iter->req.ooblen;
+ iter->req.oobbuf.in += iter->req.ooblen;
+ iter->req.dataoffs = 0;
+ iter->req.ooboffs = 0;
+ iter->req.datalen = min_t(unsigned int, nand->memorg.pagesize,
+ iter->dataleft);
+ iter->req.ooblen = min_t(unsigned int, iter->oobbytes_per_page,
+ iter->oobleft);
}
-/* return the supported JEDEC features. */
-static inline int jedec_feature(struct nand_chip *chip)
+/**
+ * nand_io_iter_end - Should end iteration or not
+ * @nand: NAND device
+ * @iter: NAND I/O iterator
+ *
+ * Check whether @iter has reached the end of the NAND portion it was asked to
+ * iterate on or not.
+ *
+ * Return: true if @iter has reached the end of the iteration request, false
+ * otherwise.
+ */
+static inline bool nanddev_io_iter_end(struct nand_device *nand,
+ const struct nand_io_iter *iter)
{
- return chip->jedec_version ? le16_to_cpu(chip->jedec_params.features)
- : 0;
+ if (iter->dataleft || iter->oobleft)
+ return false;
+
+ return true;
}
-/* Standard NAND functions from nand_base.c */
-void nand_write_buf(struct mtd_info *mtd, const uint8_t *buf, int len);
-void nand_write_buf16(struct mtd_info *mtd, const uint8_t *buf, int len);
-void nand_read_buf(struct mtd_info *mtd, uint8_t *buf, int len);
-void nand_read_buf16(struct mtd_info *mtd, uint8_t *buf, int len);
-uint8_t nand_read_byte(struct mtd_info *mtd);
+/**
+ * nand_io_for_each_page - Iterate over all NAND pages contained in an MTD I/O
+ * request
+ * @nand: NAND device
+ * @start: start address to read/write from
+ * @req: MTD I/O request
+ * @iter: NAND I/O iterator
+ *
+ * Should be used for iterate over pages that are contained in an MTD request.
+ */
+#define nanddev_io_for_each_page(nand, start, req, iter) \
+ for (nanddev_io_iter_init(nand, start, req, iter); \
+ !nanddev_io_iter_end(nand, iter); \
+ nanddev_io_iter_next_page(nand, iter))
+
+bool nanddev_isbad(struct nand_device *nand, const struct nand_pos *pos);
+bool nanddev_isreserved(struct nand_device *nand, const struct nand_pos *pos);
+int nanddev_markbad(struct nand_device *nand, const struct nand_pos *pos);
+
+/* BBT related functions */
+enum nand_bbt_block_status {
+ NAND_BBT_BLOCK_STATUS_UNKNOWN,
+ NAND_BBT_BLOCK_GOOD,
+ NAND_BBT_BLOCK_WORN,
+ NAND_BBT_BLOCK_RESERVED,
+ NAND_BBT_BLOCK_FACTORY_BAD,
+ NAND_BBT_BLOCK_NUM_STATUS,
+};
-/*
- * struct nand_sdr_timings - SDR NAND chip timings
+int nanddev_bbt_init(struct nand_device *nand);
+void nanddev_bbt_cleanup(struct nand_device *nand);
+int nanddev_bbt_update(struct nand_device *nand);
+int nanddev_bbt_get_block_status(const struct nand_device *nand,
+ unsigned int entry);
+int nanddev_bbt_set_block_status(struct nand_device *nand, unsigned int entry,
+ enum nand_bbt_block_status status);
+int nanddev_bbt_markbad(struct nand_device *nand, unsigned int block);
+
+/**
+ * nanddev_bbt_pos_to_entry() - Convert a NAND position into a BBT entry
+ * @nand: NAND device
+ * @pos: the NAND position we want to get BBT entry for
*
- * This struct defines the timing requirements of a SDR NAND chip.
- * These informations can be found in every NAND datasheets and the timings
- * meaning are described in the ONFI specifications:
- * www.onfi.org/~/media/ONFI/specs/onfi_3_1_spec.pdf (chapter 4.15 Timing
- * Parameters)
+ * Return the BBT entry used to store information about the eraseblock pointed
+ * by @pos.
*
- * All these timings are expressed in picoseconds.
+ * Return: the BBT entry storing information about eraseblock pointed by @pos.
*/
+static inline unsigned int nanddev_bbt_pos_to_entry(struct nand_device *nand,
+ const struct nand_pos *pos)
+{
+ return pos->eraseblock +
+ ((pos->lun + (pos->target * nand->memorg.luns_per_target)) *
+ nand->memorg.eraseblocks_per_lun);
+}
-struct nand_sdr_timings {
- u32 tALH_min;
- u32 tADL_min;
- u32 tALS_min;
- u32 tAR_min;
- u32 tCEA_max;
- u32 tCEH_min;
- u32 tCH_min;
- u32 tCHZ_max;
- u32 tCLH_min;
- u32 tCLR_min;
- u32 tCLS_min;
- u32 tCOH_min;
- u32 tCS_min;
- u32 tDH_min;
- u32 tDS_min;
- u32 tFEAT_max;
- u32 tIR_min;
- u32 tITC_max;
- u32 tRC_min;
- u32 tREA_max;
- u32 tREH_min;
- u32 tRHOH_min;
- u32 tRHW_min;
- u32 tRHZ_max;
- u32 tRLOH_min;
- u32 tRP_min;
- u32 tRR_min;
- u64 tRST_max;
- u32 tWB_max;
- u32 tWC_min;
- u32 tWH_min;
- u32 tWHR_min;
- u32 tWP_min;
- u32 tWW_min;
-};
+/**
+ * nanddev_bbt_is_initialized() - Check if the BBT has been initialized
+ * @nand: NAND device
+ *
+ * Return: true if the BBT has been initialized, false otherwise.
+ */
+static inline bool nanddev_bbt_is_initialized(struct nand_device *nand)
+{
+ return !!nand->bbt.cache;
+}
-/* get timing characteristics from ONFI timing mode. */
-const struct nand_sdr_timings *onfi_async_timing_mode_to_sdr_timings(int mode);
+/* MTD -> NAND helper functions. */
+int nanddev_mtd_erase(struct mtd_info *mtd, struct erase_info *einfo);
-int nand_check_erased_ecc_chunk(void *data, int datalen,
- void *ecc, int ecclen,
- void *extraoob, int extraooblen,
- int threshold);
#endif /* __LINUX_MTD_NAND_H */
projects / platform / kernel / u-boot.git / blobdiff